貼片鉭(tan)(tan)(tan)(tan)電(dian)(dian)(dian)(dian)(dian)(dian)容在(zai)額外電(dian)(dian)(dian)(dian)(dian)(dian)壓運(yun)行時，有(you)(you)一(yi)個(ge)167千伏(fu)/毫米(mi)電(dian)(dian)(dian)(dian)(dian)(dian)壓的電(dian)(dian)(dian)(dian)(dian)(dian)場。因(yin)此(ci)一(yi)定要保(bao)證(zheng)整個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)容器終真(zhen)個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)壓決(jue)不(bu)會超越劃(hua)定的浪(lang)涌電(dian)(dian)(dian)(dian)(dian)(dian)壓評(ping)級。作(zuo)為鉭(tan)(tan)(tan)(tan)電(dian)(dian)(dian)(dian)(dian)(dian)容負極板層(ceng)運(yun)用(yong)的半導體，二氧化錳(meng)有(you)(you)自愈才(cai)能。然而，這種(zhong)低阻(zu)是有(you)(you)限的，在(zai)低阻(zu)抗電(dian)(dian)(dian)(dian)(dian)(dian)路的情況下，電(dian)(dian)(dian)(dian)(dian)(dian)容器或許(xu)被浪(lang)涌電(dian)(dian)(dian)(dian)(dian)(dian)流擊穿。降(jiang)壓的電(dian)(dian)(dian)(dian)(dian)(dian)容添加(jia)了元件的可靠性(xing)。額外電(dian)(dian)(dian)(dian)(dian)(dian)壓運(yun)用(yong)上(shang)常見的電(dian)(dian)(dian)(dian)(dian)(dian)壓軌跡、低阻(zu)抗鉭(tan)(tan)(tan)(tan)電(dian)(dian)(dian)(dian)(dian)(dian)容在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)路進行快(kuai)速充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)或放電(dian)(dian)(dian)(dian)(dian)(dian)時，保(bao)護電(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)主張為1Ω/V，假(jia)設達不(bu)到(dao)此(ci)要求(qiu)應運(yun)用(yong)鉭(tan)(tan)(tan)(tan)電(dian)(dian)(dian)(dian)(dian)(dian)容器降(jiang)壓系(xi)數(shu)高達70%，avx鉭(tan)(tan)(tan)(tan)電(dian)(dian)(dian)(dian)(dian)(dian)容在(zai)這種(zhong)情況下，或許(xu)需求(qiu)更高的電(dian)(dian)(dian)(dian)(dian)(dian)壓比作(zuo)為一(yi)個(ge)單一(yi)的電(dian)(dian)(dian)(dian)(dian)(dian)容。

鉭電容的組合應被告用來添加作業電壓的等效電容器。電容在很短的時刻經由最小的串聯電阻的電路國家能接受的最高電壓。浪涌電壓常溫下一個小時時刻內可達到高達10倍額度電壓并高達30秒的時刻。這些都是由幾種不同的機制，包括電阻元件和觸點、粘性實力內介質和生產旁路的缺陷電流途徑。為了表達對他們的這些丟失的影響視為電容的ESR.ESR的頻率依靠性和可利用的關系。　　

信息來源：avx鉭電(dian)(dian)容(rong)，貼(tie)片鉭電(dian)(dian)容(rong)，基(ji)(ji)美(mei)貼(tie)片鉭電(dian)(dian)容(rong)，avx貼(tie)片鉭電(dian)(dian)容(rong)，基(ji)(ji)美(mei)鉭電(dian)(dian)容(rong)