鉭(tan)電(dian)(dian)(dian)容(rong)為前(qian)進(jin)圖像分(fen)辨(bian)率，MRI體(ti)系的(de)(de)(de)磁(ci)場水平不(bu)(bu)斷前(qian)進(jin)，而(er)MRI室(shi)內運用的(de)(de)(de)電(dian)(dian)(dian)容(rong)會形成磁(ci)場畸變。因(yin)而(er)，需求削減(jian)或大部(bu)分(fen)電(dian)(dian)(dian)容(rong)中的(de)(de)(de)磁(ci)性資料(liao)。推出的(de)(de)(de)系列MLCC在電(dian)(dian)(dian)和端接結(jie)構中選(xuan)用非鐵資料(liao)，來知足磁(ci)化的(de)(de)(de)要求。無磁(ci)結(jie)構可以(yi)選(xuan)用X7R和NPO電(dian)(dian)(dian)介質(zhi)。avx鉭(tan)電(dian)(dian)(dian)容(rong)的(de)(de)(de)質(zhi)量(liang)(liang)很好，我曾經買了一個KEMET鉭(tan)電(dian)(dian)(dian)容(rong)，現在還沒(mei)有壞(huai)，所以(yi)質(zhi)量(liang)(liang)沒(mei)話說(shuo)。電(dian)(dian)(dian)路設計和產品選(xuan)型不(bu)(bu)存在標題;產品機能參數(shu)可以(yi)知足電(dian)(dian)(dian)路信號特色.

avx鉭(tan)電(dian)(dian)(dian)(dian)容可(ke)以根據分(fen)布由器(qi)件選(xuan)用(yong)的共(gong)同設(she)計來操(cao)控，VBD可(ke)達3kV或(huo)(huo)(huo)以上。本產(chan)品選(xuan)用(yong)了(le)NPO和(he)X7R電(dian)(dian)(dian)(dian)介質(zhi)。磁共(gong)振成像設(she)備內(nei)部或(huo)(huo)(huo)周邊電(dian)(dian)(dian)(dian)路中所運用(yong)的電(dian)(dian)(dian)(dian)容及其他電(dian)(dian)(dian)(dian)子元器(qi)件需求或(huo)(huo)(huo)封裝在(zai)MRI室外(wai)。電(dian)(dian)(dian)(dian)容的電(dian)(dian)(dian)(dian)介質(zhi)、電(dian)(dian)(dian)(dian)資(zi)料或(huo)(huo)(huo)端接資(zi)料中或(huo)(huo)(huo)許含有鐵質(zhi)或(huo)(huo)(huo)磁性資(zi)料。

avx貼片鉭電(dian)容(rong)的高壓電(dian)弧(hu)防護(hu)電(dian)容(rong)解決方(fang)案，為解決這一(yi)標題，Vishay推出(chu)了一(yi)系(xi)列的HVArc（高壓電(dian)弧(hu)）防護(hu)MLCC（多層(ceng)貼片陶瓷電(dian)容(rong)），可防止電(dian)弧(hu)放電(dian)，同(tong)時節省空(kong)間。這些新器(qi)件(jian)在較高的電(dian)壓定額內具有(you)容(rong)量，而且前進了電(dian)壓擊穿的耐受能力。

　　信息來源：鉭電(dian)(dian)容(rong)(rong)，avx鉭電(dian)(dian)容(rong)(rong)，貼片鉭電(dian)(dian)容(rong)(rong)，基美(mei)貼片鉭電(dian)(dian)容(rong)(rong)，avx貼片鉭電(dian)(dian)容(rong)(rong)，基美(mei)鉭電(dian)(dian)容(rong)(rong)