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avx鉭電(dian)(dian)容(rong)的快速康復(fu)及整流(liu)鉭電(dian)(dian)容(rong)和超快康復(fu)整流(liu)鉭電(dian)(dian)容(rong)在(zai)開關電(dian)(dian)源中作(zuo)為整流(liu)器材(cai)使用時是(shi)否(fou)需要(yao)(yao)散熱器，要(yao)(yao)根據電(dian)(dian)路(lu)的最(zui)大(da)功率來決定(ding)。一(yi)般(ban)情況下(xia)，這(zhe)些鉭電(dian)(dian)容(rong)在(zai)制造時允許的結溫在(zai)175℃，生產廠(chang)家對該(gai)指標都有技術(shu)闡明，以提供(gong)給(gei)設計者(zhe)去核(he)算最(zui)大(da)的輸(shu)出工作(zuo)電(dian)(dian)流(liu)、電(dian)(dian)壓及外殼溫度等。...
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開關電(dian)(dian)源(yuan)中(zhong)的(de)(de)整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong)有必要具有正向(xiang)壓(ya)下(xia)(xia)降、快(kuai)速康(kang)(kang)(kang)復的(de)(de)特色，還應具有足(zu)夠(gou)大的(de)(de)輸(shu)出(chu)功(gong)率，可以采用以下(xia)(xia)三種類型的(de)(de)整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong)：快(kuai)速康(kang)(kang)(kang)復整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong);超(chao)快(kuai)速康(kang)(kang)(kang)復整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong);肖特基整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong)。快(kuai)速康(kang)(kang)(kang)復和超(chao)快(kuai)康(kang)(kang)(kang)復整(zheng)流(liu)(liu)鉭電(dian)(dian)容(rong)具有適(shi)中(zhong)的(de)(de)和較(jiao)高的(de)(de)正向(xiang)電(dian)(dian)壓(ya)降，其(qi)規模(mo)是從0.8～1.2V。這兩種整(zheng)流(liu)(liu)鉭電(dian)(dian)......
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臺積電InFO產(chan)品結構如下：其工藝流程如下：1、在晶圓Pad上制(zhi)作一(yi)層預制(zhi)銅柱(zhu)；2、將切割好的芯片Pad面向上粘貼在帶臨時鍵合膠(jiao)的載片上；3、對載片進行(xing)灌膠(jiao)塑封；4、對塑封好的扇(shan)出晶圓進行(xing)研磨，露出預制(zhi)銅柱(zhu)的頂(ding)部；......
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復(fu)(fu)(fu)位電(dian)(dian)(dian)(dian)路中，放電(dian)(dian)(dian)(dian)鉭電(dian)(dian)(dian)(dian)容(rong)(rong)確不(bu)可缺少(shao)。當(dang)電(dian)(dian)(dian)(dian)源(yuan)(yuan)斷電(dian)(dian)(dian)(dian)后，鉭電(dian)(dian)(dian)(dian)容(rong)(rong)經(jing)過(guo)鉭電(dian)(dian)(dian)(dian)容(rong)(rong)D敏捷(jie)放電(dian)(dian)(dian)(dian)，待電(dian)(dian)(dian)(dian)源(yuan)(yuan)康復(fu)(fu)(fu)時便可完(wan)成(cheng)可靠上電(dian)(dian)(dian)(dian)主(zhu)動復(fu)(fu)(fu)位。若沒(mei)有鉭電(dian)(dian)(dian)(dian)容(rong)(rong)D，當(dang)電(dian)(dian)(dian)(dian)源(yuan)(yuan)因某(mou)種攪擾(rao)瞬(shun)間斷電(dian)(dian)(dian)(dian)時，因為(wei)鉭電(dian)(dian)(dian)(dian)容(rong)(rong)不(bu)能(neng)敏捷(jie)將電(dian)(dian)(dian)(dian)荷放掉(diao)，待電(dian)(dian)(dian)(dian)源(yuan)(yuan)康復(fu)(fu)(fu)時，單片機不(bu)能(neng)上電(dian)(dian)(dian)(dian)主(zhu)動復(fu)(fu)(fu)位，導(dao)致(zhi)程序(xu)(xu)運轉失控。電(dian)(dian)(dian)(dian)源(yuan)(yuan)瞬(shun)間斷電(dian)(dian)(dian)(dian)攪擾(rao)會導(dao)致(zhi)程序(xu)(xu)住手正常運......
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自從Fan-Out封(feng)(feng)裝問世以(yi)來，經(jing)過多(duo)年的技術發(fa)展(zhan)，扇出式(shi)封(feng)(feng)裝已經(jing)形成了多(duo)種(zhong)封(feng)(feng)裝流程、封(feng)(feng)裝結構以(yi)適(shi)應不同產品需(xu)要，根據(ju)工藝(yi)(yi)流程，可以(yi)分為(wei)先(xian)貼芯(xin)(xin)片后(hou)加工RDL的ChipFirst工藝(yi)(yi)和先(xian)制作RDL后(hou)貼裝芯(xin)(xin)片的ChipLast工藝(yi)(yi)兩大......
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全球半導體系編制(zhi)造商(shang)ROHM發布了業界(jie)最小級別二(er)極管(guan)，首(shou)要(yao)面向智能手機(ji)和可穿著設備，同時也(ye)可用于無人機(ji)等移動終端。nxp電(dian)源管(guan)理芯片損壞有(you)(you)以下幾種表現：nxp電(dian)源管(guan)理芯片是失掉容(rong)(rong)量或(huo)容(rong)(rong)量變小;二(er)是略微或(huo)嚴峻漏(lou)電(dian);三是失掉容(rong)(rong)量或(huo)容(rong)(rong)量變小兼有(you)(you)漏(lou)電(dian)。實際上本產品(pin)已經在2015年10月(yue)開(kai)......
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nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)是(shi)電(dian)器設(she)備中數目(mu)最多的元件，但(dan)不是(shi)損(sun)壞率最高的元件。nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)損(sun)壞以開(kai)路最，阻(zu)值變(bian)大較罕(han)見(jian)，阻(zu)值變(bian)小十(shi)分(fen)罕(han)見(jian)。有碳(tan)膜(mo)nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)、金屬膜(mo)nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)、線繞(rao)nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)和(he)穩妥nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)幾(ji)種。線繞(rao)nxp電(dian)源(yuan)(yuan)管(guan)理(li)芯片(pian)(pian)(pian)(pian)用(yong)作大電(dian)流(liu)限流(liu)，阻(zu)......
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有(you)(you)的(de)電容損壞(huai)(huai)時(shi)(shi)會漏(lou)液，電容下面的(de)電路(lu)板表(biao)(biao)面乃(nai)至電容外表(biao)(biao)都會有(you)(you)一層油漬，這種(zhong)電容絕對不(bu)能(neng)再用(yong);有(you)(you)的(de)電容損壞(huai)(huai)后會鼓起，這種(zhong)電容也不(bu)能(neng)承繼使用(yong);avx鉭(tan)(tan)電容的(de)損壞(huai)(huai)是(shi)PN結擊穿或開路(lu)，其(qi)中以擊穿短路(lu)居多(duo)。此(ci)外還有(you)(you)兩種(zhong)損壞(huai)(huai)體現(xian)：avx鉭(tan)(tan)電容的(de)不(bu)亂性變差，體現(xian)為開機時(shi)(shi)正常，工(gong)作一段(duan)時(shi)(shi)間后，發......
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nxp電(dian)(dian)源(yuan)(yuan)管(guan)理(li)芯片半導體的穩(wen)壓(ya)器根(gen)據獨特的功用(yong)組合 - 極低靜態電(dian)(dian)流(liu)、快速瞬態響應以及高(gao)輸(shu)入和(he)(he)輸(shu)出電(dian)(dian)壓(ya)規模。電(dian)(dian)源(yuan)(yuan)管(guan)理(li)芯片的規劃具有高(gao)達38 V的輸(shu)入電(dian)(dian)壓(ya)和(he)(he)150 mA的輸(shu)出電(dian)(dian)流(liu)。nxp電(dian)(dian)源(yuan)(yuan)管(guan)理(li)芯片系列電(dian)(dian)容器采用(yong)小標準封裝，提(ti)供600、800和(he)(he)1100V的選擇，具有內置(zhi)的保險絲功用(yong)......
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我們都知道國(guo)內(nei)的(de)(de)(de)手機(ji)廠(chang)商的(de)(de)(de)的(de)(de)(de)芯(xin)片(pian)基本上(shang)都是用的(de)(de)(de)國(guo)外(wai)的(de)(de)(de)芯(xin)片(pian)。你會說有海思呀，這(zhe)個我們后面說。國(guo)內(nei)的(de)(de)(de)手機(ji)廠(chang)商，造(zao)手機(ji)容易，但是造(zao)芯(xin)就不是一個級(ji)別(bie)了。因為(wei)造(zao)手機(ji)芯(xin)片(pian)難度真的(de)(de)(de)大，前期(qi)需要投入很(hen)多錢和時間，畢竟......
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nxp電源管理芯(xin)(xin)片能(neng)夠(gou)供(gong)給安(an)(an)全(quan)的銜接(jie)和根(gen)底(di)行動辦法(fa)服務，讓國際更智能(neng)，推進擬定解決(jue)(jue)(jue)方(fang)案(an)(an)，讓生活更儉樸、更夸姣、更安(an)(an)全(quan)。 作為嵌入式應用領域(yu)安(an)(an)全(quan)銜接(jie)解決(jue)(jue)(jue)方(fang)案(an)(an)的全(quan)球搶先企業，nxp電源管理芯(xin)(xin)片致(zhi)力于推進安(an)(an)全(quan)互聯車輛、端(duan)到端(duan)安(an)(an)全(quan)性和隱私性以及智能(neng)銜接(jie)解決(jue)(jue)(jue)方(fang)案(an)(an)商場方(fang)面(mian)的立異。該(gai)公司具有6......
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近幾年國(guo)內的(de)(de)(de)(de)半導體發(fa)(fa)展迅速(su)，自然(ran)對(dui)相關(guan)人才(cai)需求量也變(bian)大了。我(wo)們都知道人才(cai)是要朋友(you)的(de)(de)(de)(de)，需要時間自然(ran)是跟不上(shang)半導體發(fa)(fa)展的(de)(de)(de)(de)速(su)度的(de)(de)(de)(de)。所以就顯得芯(xin)片(pian)人才(cai)緊缺。當然(ran)這個也只是原因之一，企業(ye)和學(xue)校的(de)(de)(de)(de)培(pei)訓也是沒(mei)有跟上(shang)......
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